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november 2006 rev 2 1/12 12 STS15N4LLF3 n-channel 40v - 0.0042 ? - 15a - so-8 stripfet? power mosfet optimal r ds(on) x q g trade-off @ 4.5v conduction losses reduced switching losses reduced description this n-channel enhancement mode power mosfet is the latest refinement of stmicroelectronic unique ?single feature size?? strip-based process with le ss critical aligment steps and therefore a remarkable manufacturing reproducibility. the resu lting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and low gate charge. applications switching application internal schematic diagram general features type v dss r ds(on) i d STS15N4LLF3 40v <0.005 ? 15a so-8 www.st.com order codes part number marking package packaging STS15N4LLF3 15n4ll- so-8 tape & reel
contents STS15N4LLF3 2/12 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STS15N4LLF3 electrical ratings 3/12 1 electrical ratings table 1. absolute maximim ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 40 v v gs gate-source voltage 16 v v gs (1) 1. guaranteed for test time < 15ms gate- source voltage 18 v i d drain current (continuous) at t c = 25c 15 a i d drain current (continuous) at t c = 100c 9.3 a i dm (2) 2. pulse width limited by tjmax drain current (pulsed) 60 a p tot total dissipation at t c = 25c 2.7 w e as (3) 3. starting t j =25c, i d =7.5a, v dd =25v single pulse avalanche energy 2 j table 2. thermal resistance symbol parameter value unit r thj -pcb (1) 1. when mounted of fr-4 board with 1 inch 2 pad, 2oz of cu and t< 10sec thermal resistance junction-pcb max 47 c/w t l maximum lead temperature for soldering -55 to 150 c t stg storage temperature -55 to 150 c
electrical characteristics STS15N4LLF3 4/12 2 electrical characteristics (t j = 25 c unless otherwise specified) table 3. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250a, v gs = 0 40 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds =max rating @125c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 16v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250a 1 v r ds(on) static drain-source on resistance v gs = 10v, i d = 7.5a v gs = 4.5v, i d = 7.5a 0.0042 0.005 0.005 0.007 ? ? table 4. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f=1 mhz, v gs = 0 2530 574 29 pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 20v, i d = 15a v gs = 4.5v (see figure 13) 21.5 6.9 8.2 28 nc nc nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20mv open drain 135 ? table 5. switching times symbol parameter test cond itions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 20v, i d = 7.5a, r g = 4.7 ?, v gs = 10v (see figure 15) 17 25 ns ns t d(off) t f turn-off delay time fall time v dd = 20v, i d = 7.5a, r g = 4.7 ?, v gs = 10v (see figure 15) 62 9 ns ns
STS15N4LLF3 electrical characteristics 5/12 table 6. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) 15 60 a a v sd (2) 2. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 15a, v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 15a, v dd = 30v, di/dt = 100a/s, tj = 150c (see figure 14) 43 64 3 ns nc a
electrical characteristics STS15N4LLF3 6/12 2.1 electrical characteri stics (curves) figure 1. safe operating area figure 2. thermal impedance figure 3. output characterisics figure 4. transfer characteristics figure 5. normalized b vdss vs temperature figure 6. static drain-source on resistance
STS15N4LLF3 electrical characteristics 7/12 figure 7. gate charge vs gate-source voltage figure 8. capacitance variations figure 9. normalized gate threshold voltage vs temperature figure 10. normalized on resistance vs temperature figure 11. source-drain diode forward characteristics
test circuit STS15N4LLF3 8/12 3 test circuit figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform
STS15N4LLF3 package mechanical data 9/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: t www.st.com
package mechanical data STS15N4LLF3 10/12 dim. mm. inch min. typ max. min. typ. max. a 1.75 0.068 a1 0.1 0.25 0.003 0.009 a2 1.65 0.064 a3 0.65 0.85 0.025 0.033 b 0.35 0.48 0.013 0.018 b1 0.19 0.25 0.007 0.010 c 0.25 0.5 0.010 0.019 c1 45 (typ.) d 4.8 5.0 0.188 0.196 e 5.8 6.2 0.228 0.244 e 1.27 0.050 e3 3.81 0.150 f 3.8 4.0 0.14 0.157 l 0.4 1.27 0.015 0.050 m 0.6 0.023 s 8 (max.) so-8 mechanical data
STS15N4LLF3 revision history 11/12 5 revision history table 7. revision history date revision changes 09-jun-2006 1 first release 22-nov-2006 2 corrected part number
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